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Semiconductor Components Industries, LLC, 2001
January, 2001 – Rev. 3
1 Publication Order Number:
MSD1819A–RT1/D
MSD1819A-RT1
Preferred Device
General Purpose
Amplifier Transistor
NPN Silicon Surface Mount
This NPN Silicon Epitaxial Planar Transistor is designed for general
purpose amplifier applications. This device is housed in the
SC-70/SOT-323 package which is designed for low power surface
mount applications.
• High h
FE
, 210–460
• Low V
CE(sat)
, < 0.5 V
• Available in 8 mm, 7-inch/3000 Unit Tape and Reel
• Moisture Sensitivity Level 1
• ESD Protection: Human Body Model > 4000 V
ESD Protection: Machine Model > 400 V
MAXIMUM RATINGS (T
A
= 25°C)
Rating
Symbol Value Unit
Collector-Base Voltage V
(BR)CBO
60 Vdc
Collector-Emitter Voltage V
(BR)CEO
50 Vdc
Emitter-Base Voltage V
(BR)EBO
7.0 Vdc
Collector Current – Continuous I
C
100 mAdc
Collector Current – Peak I
C(P)
200 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Power Dissipation (Note 1.) P
D
150 mW
Junction Temperature T
J
150 °C
Storage Temperature Range T
stg
–55 ~ +150 °C
1. Device mounted on a FR-4 glass epoxy printed circuit board using the
minimum recommended footprint.
Device Package Shipping
ORDERING INFORMATION
MSD1819A–RT1 SC–70
http://onsemi.com
SC–70
CASE 419
STYLE 3
3000/Tape & Reel
2
3
1
Preferred devices are recommended choices for future use
and best overall value.
MARKING DIAGRAM
ZR M
ZR= Specific Device Code
M = Date Code
COLLECTOR
3
1
BASE
2
EMITTER
MSD1819A–RT3 SC–70 10,000/Tape & Reel
