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MRF6V14300HR3 MRF6V14300HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
RF Power transis tors designed for applic ations operating at frequencies
between 1200 and 1400 MHz, 1% to 12% duty cycle. These devices are
suitable for use in pulsed applications.
! Typical Pulsed Performance: V
DD
=50Volts,I
DQ
= 150 mA, P
out
=
330 Watts Peak (39.6 W Avg.), f = 1400 MHz, Pulse Width = 300
"sec,
Duty Cycle = 12%
Power Gain — 18 dB
Drain Efficiency — 60.5%
! Capable of Handling 5:1 VSWR, @ 50 Vdc, 1400 MHz, 330 Watts Peak
Power
Features
! Characterized with Series Equivalent Large--Signal Impedance Parameters
! Internally Matched for Ease of Use
! Qualified Up to a Maximum of 50 V
DD
Operation
! Integrated ESD Protection
! Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
! RoHS Compliant
! In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage V
DSS
--0.5, +100 Vdc
Gate--Source Voltage V
GS
--6.0, +10 Vdc
Storage Temperature Range T
stg
-- 65 to +150 #C
Case Operating Temperature T
C
150 #C
Operating Junction Temperature
(1,2)
T
J
225 #C
Table 2. Thermal Characteristics
Characteristic Symbol Value
(2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 65#C, 330 W Pulsed, 300 "sec Pulse Width, 12% Duty Cycle
Z
$
JC
0.13 #C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf
. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf
.
Select Documentation/Application Notes -- AN1955.
Document Number: MRF6V14300H
Rev. 3, 4/2010
Freescale Semiconductor
Technical Data
1400 MHz, 330 W, 50 V
PULSED
LATERAL N--CHANNEL
RF POWER MOSFETs
MRF6V14300HR3
MRF6V14300HSR3
CASE 465A--06, STYLE 1
NI--780S
MRF6V14300HSR3
CASE 465--06, STYLE 1
NI--780
MRF6V14300HR3
% Freescale Semiconductor, Inc., 2008, 2010.
A
ll rights reserved.
