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MMG3014NT1
1
RF Device Data
Freescale Semiconductor
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
Broadband High Linearity Amplifier
The MMG3014NT1 is a General Purpose Amplifier that is internally
input matched and internally output prematched. It is designed for a broad
range of Class A, small -signal, high linearity, general purpose applica-
tions. It is suitable for applications with frequencies from 40 to 4000 MHz
such as Cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and
general small-signal RF.
Features
• Frequency: 40-4000 MHz
• P1dB: 25 dBm @ 900 MHz
• Small-Signal Gain: 19.5 dB @ 900 MHz
• Third Order Output Intercept Point: 40.5 dBm @ 900 MHz
• Single 5 Volt Supply
• Active Bias
• Low Cost SOT-89 Surface Mount Package
• RoHS Compliant
• In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 inch Reel.
40-4000 MHz, 19.5 dB
25 dBm
InGaP HBT
MMG3014NT1
1
2
3
CASE 1514-02, STYLE 1
SOT-89
PLASTIC
Table 1. Typical Performance
(1)
Characteristic Symbol 900
MHz
2140
MHz
3500
MHz
Unit
Small-Signal Gain
(S21)
G
p
19.5 15 10 dB
Input Return Loss
(S11)
IRL -25 -12 -8 dB
Output Return Loss
(S22)
ORL -11 −13 -19 dB
Power Output @1dB
Compression
P1db 25 25.8 25 dBm
Third Order Output
Intercept Point
IP3 40.5 40.5 40 dBm
1. V
CC
= 5 Vdc, T
C
= 25°C, 50 ohm system, in Freescale
Application Circuits.
Table 2. Maximum Ratings
Rating Symbol Value Unit
Supply Voltage V
CC
6 V
Supply Current I
CC
300 mA
RF Input Power P
in
15 dBm
Storage Temperature Range T
stg
-65 to +150 °C
Junction Temperature
(2)
T
J
150 °C
2. For reliable operation, the junction temperature should not
exceed 150°C.
Table 3. Thermal Characteristics (V
CC
= 5 Vdc, I
CC
= 135 mA, T
C
= 25°C)
Characteristic Symbol Value
(3)
Unit
Thermal Resistance, Junction to Case R
θ
JC
27.4 °C/W
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MMG3014NT1
Rev. 1, 9/2008
Freescale Semiconductor
Technical Data
Freescale Semiconductor, Inc., 2008. All rights reserved.
