© Semiconductor Components Industries, LLC, 1994
October, 2016 − Rev. 5
1 Publication Order Number:
MMBT6427LT1/D
MMBT6427LT1G,
SMMBT6427LT1G
Darlington Transistor
NPN Silicon
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
40 Vdc
Collector−Base Voltage V
CBO
40 Vdc
Emitter−Base Voltage V
EBO
12 Vdc
Collector Current − Continuous I
C
500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board,
(Note 1) T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
R
q
JA
556 °C/W
Total Device Dissipation Alumina Substrate,
(Note 2) T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
R
q
JA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
www.onsemi.com
SOT−23 (TO−236)
CASE 318
STYLE 6
Device Package Shipping
†
ORDERING INFORMATION
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MMBT6427LT1G SOT−23
(Pb−Free)
3,000 Tape & Reel
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
1V M G
G
1V = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
COLLECTOR 3
BASE
1
EMITTER 2
SMMBT6427LT1G SOT−23
(Pb−Free)
3,000 Tape & Reel
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