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© Semiconductor Components Industries, LLC, 2007
January, 2007 − Rev. 5
1 Publication Order Number:
MMBT2369LT1/D
MMBT2369LT1,
MMBT2369ALT1
MMBT2369ALT1 is a Preferred Device
Switching Transistors
NPN Silicon
Features
• Pb−Free Packages are Available
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
15 Vdc
Collector−Emitter Voltage V
CES
40 Vdc
Collector−Base Voltage V
CBO
40 Vdc
Emitter−Base Voltage V
EBO
4.5 Vdc
Collector Current − Continuous I
C
200 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 1) T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
R
q
JA
556 °C/W
Total Device Dissipation Alumina
Substrate, (Note 2) T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
R
q
JA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Device Package Shipping
ORDERING INFORMATION
MMBT2369LT1 SOT−23 3000/Tape & Ree
l
Preferred devices are recommended choices for future use
and best overall value.
MARKING DIAGRAMS
COLLECTOR
3
1
BASE
2
EMITTER
MMBT2369ALT1 SOT−23 3000/Tape & Ree
l
http://onsemi.com
xxx = M1J or 1JA
M = Date Code*
G = Pb−Free Package
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
MMBT2369ALT1G SOT−23
(Pb−Free)
3000/Tape & Ree
l
MMBT2369LT1G SOT−23
(Pb−Free)
3000/Tape & Ree
l
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
SOT−23
CASE 318
STYLE 6
1
2
1
3
xxx M G
G
