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©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001
MJE3055T
NPN Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Electrical Characteristics
T
C
=25°C unless otherwise noted
* Pulse test: PW≤300µs, duty cycle≤2% Pulse
Symbol Parameter Value Units
V
CBO
Collector -Base Voltage 70 V
V
CEO
Collector-Emitter Voltage 60 V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current 10 A
I
B
Base Current 6 A
P
C
Collector Dissipation (T
C
=25°C) 75 W
P
C
Collector Dissipation (T
a
=25°C) 0.6 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
BV
CEO
Collector-Emitter Breakdown Voltage I
C
= 200mA, I
B
= 0 60 V
I
CEO
Collector Cut-off Current V
CE
= 30V, I
B
= 0 700 µA
I
CEX1
I
CEX2
Collector Cut-off Current V
CE
= 70V, V
BE
(off) = -1.5V
V
CE
= 70V, V
BE
(off) = -1.5V
@ T
C
= 150°C
1
5
mA
mA
I
EBO
Emitter Cut-off Current V
EB
= 5V, I
C
= 0 5 mA
h
FE
*DC Current Gain
V
CE
= 4V, I
C
= 4A
V
CE
= 4V, I
C
= 10A
20
5
100
V
CE
(sat) *Collector-Emitter Saturation Voltage I
C
= 4A, I
B
= 0.4A
I
C
= 10A, I
B
= 3.3A
1.1
8
V
V
V
BE
(on) *Base-Emitter On Voltage V
CE
= 4V, I
C
= 4A 1.8 V
f
T
Current Gain Bandwidth Product V
CE
= 10V, I
C
= 500mA 2 MHz
MJE3055T
General Purpose and Switching Applications
• DC Current Gain Specified to I
C
=10A
• High Current Gain-Bandwidth Product : f
T
= 2MHz (Min.)
1.Base 2.Collector 3.Emitter
1
TO-220
