Datasheet
数据手册 > 双极性,晶体管,BJT,双极型 > ON Semiconductor > MJD32CT4G 数据手册PDF > MJD32CT4G 应用笔记 第 1/10 页
MJD32CT4G
¥ 3.81
百芯的价格

MJD32CT4G 应用笔记 - ON Semiconductor

更新时间: 2025-06-15 04:42:50 (UTC+8)

MJD32CT4G 应用笔记

页码:/10页
下载 PDF
重新加载
下载
© Semiconductor Components Industries, LLC, 2016
February, 2016 − Rev. 14
1 Publication Order Number:
MJD31/D
MJD31 (NPN), MJD32 (PNP)
Complementary Power
Transistors
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching
applications.
Features
Lead Formed for Surface Mount Applications in Plastic Sleeves
Straight Lead Version in Plastic Sleeves (“1” Suffix)
Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
Electrically Similar to Popular TIP31 and TIP32 Series
Epoxy Meets UL 94, V−0 @ 0.125 in
NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
Rating Symbol Max Unit
Collector−Emitter Voltage
MJD31, MJD32
MJD31C, MJD32C
V
CEO
40
100
Vdc
Collector−Base Voltage
MJD31, MJD32
MJD31C, MJD32C
V
CB
40
100
Vdc
Emitter−Base Voltage V
EB
5.0 Vdc
Collector Current − Continuous I
C
3.0 Adc
Collector Current − Peak I
CM
5.0 Adc
Base Current I
B
1.0 Adc
Total Power Dissipation
@ T
C
= 25°C
Derate above 25°C
P
D
15
0.12
W
W/°C
Total Power Dissipation
@ T
A
= 25°C
Derate above 25°C
P
D
1.56
0.012
W
W/°C
Operating and Storage Junction Temperature
Range
T
J
, T
stg
65 to
+150
°C
ESD − Human Body Model HBM 3B V
ESD − Machine Model MM C V
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
8.3 °C/W
Thermal Resistance, Junction−to−Ambient*
R
q
JA
80 °C/W
Lead Temperature for Soldering Purposes T
L
260 °C
*These ratings are applicable when surface mounted on the minimum pad sizes recommended.
SILICON
POWER TRANSISTORS
3 AMPERES
40 AND 100 VOLTS
15 WATTS
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
ORDERING INFORMATION
IPAK
CASE 369D
STYLE 1
DPAK
CASE 369C
STYLE 1
MARKING DIAGRAMS
A = Site Code
Y = Year
WW = Work Week
xx = 1, 1C, 2, or 2C
G = Pb−Free Package
AYWW
J3xxG
YWW
J3xxG
www.onsemi.com
DPAK IPAK
4
1
2
3
4
1
2
3
1
BASE
3
EMITTER
COLLECTOR
2,4
1
BASE
3
EMITTER
COLLECTOR
2,4
COMPLEMENTARY
页面指南

MJD32CT4G 数据手册 PDF

MJD32CT4G 数据手册
ON Semiconductor
11 页, 136 KB
MJD32CT4G 其它数据手册
ON Semiconductor
11 页, 280 KB
MJD32CT4G 应用笔记
ON Semiconductor
10 页, 96 KB
MJD32CT4G 产品修订记录
ON Semiconductor
5 页, 45 KB
MJD32CT4G 其他参考文件
ON Semiconductor
1 页, 146 KB

MJD32CT4 数据手册 PDF

MJD32CT4
数据手册
ST Microelectronics
Trans GP BJT PNP 100V 3A 15000mW 3Pin(2+Tab) TO-252 T/R
MJD32CT4
数据手册
ON Semiconductor
Bipolar Transistors - BJT 3A 100V 15W PNP
MJD32CT4
数据手册
Motorola
Trans GP BJT PNP 100V 3A 3Pin(2+Tab) DPAK T/R
MJD32CT4
数据手册
Jiangsu Changjiang Electronics Technology
Transistor
MJD32CT4G
数据手册
ON Semiconductor
DPAK PNP 100V 3A
MJD32CT4-A
数据手册
ST Microelectronics
TO-252 PNP 100V 3A
MJD32CT4G
应用笔记
ST Microelectronics
Datasheet 搜索
搜索
百芯智造数据库涵盖1亿多个数据手册,每天更新超过5,000个PDF文件。
在线联系我们
黄经理 - 百芯智造销售经理在线,5 分钟前
您的邮箱 *
消息 *
发送