© Semiconductor Components Industries, LLC, 2013
August, 2013 − Rev. 12
1 Publication Order Number:
MJ15023/D
MJ15023 (PNP),
MJ15025 (PNP)
Silicon Power Transistors
The MJ15023 and MJ15025 are power transistors designed for high
power audio, disk head positioners and other linear applications.
Features
• High Safe Operating Area
• High DC Current Gain
• Complementary to MJ15022 (NPN), MJ15024 (NPN)
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage
MJ15023
MJ15025
V
CEO
200
250
Vdc
Collector−Base Voltage
MJ15023
MJ15025
V
CBO
350
400
Vdc
Emitter−Base Voltage V
EBO
5 Vdc
Collector−Emitter Voltage V
CEX
400 Vdc
Collector Current − Continuous (Note 1) I
C
16 Adc
Collector Current − Peak (Note 1) I
CM
30 Adc
Base Current − Continuous I
B
5 Adc
Total Device Dissipation
@ T
C
= 25_C
Derate above 25_C
P
D
250
1.43
W
W/_C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−65 to +200
_C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
THERMAL CHARACTERISTICS
Characteristics Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
0.70
_C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
16 AMPERES
SILICON POWER TRANSISTORS
200 − 250 VOLTS, 250 WATTS
http://onsemi.com
MARKING DIAGRAM
Device Package Shipping
ORDERING INFORMATION
MJ15023G TO−204
(Pb−Free)
100 Units / Tray
MJ1502xG
AYWW
MEX
TO−204 (TO−3)
CASE 1−07
STYLE 1
MJ1502x = Device Code
x = 3 or 5
G = Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week
MEX = Country of Origin
MJ15025G TO−204
(Pb−Free)
100 Units / Tray
1
BASE
2
EMITTER
COLLECTOR
CASE
1
2
CASE
