1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
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Part of the GreenLine Portfolio of devices with energy–
conserving traits.
These miniature surface mount MOSFETs utilize Motorola’s
High Cell Density, HDTMOS process. Low r
DS(on)
assures
minimal power loss and conserves energy, making this device
ideal for use in space sensitive power management circuitry.
Typical applications are dc–dc converters and power manage-
ment in portable and battery–powered products such as
computers, printers, PCMCIA cards, cellular and cordless
telephones.
• Low r
DS(on)
Provides Higher Efficiency and Extends Battery
Life
• Miniature SOT–23 Surface Mount Package Saves Board Space
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating Symbol Value Unit
Drain–to–Source Voltage V
DSS
20 Vdc
Gate–to–Source Voltage — Continuous V
GS
± 8.0 Vdc
Drain Current — Continuous @ T
A
= 25°C
Drain Current — Pulsed Drain Current (t
p
≤ 10 µs)
I
D
I
DM
750
2000
mA
Total Power Dissipation @ T
A
= 25°C P
D
400 mW
Operating and Storage Temperature Range T
J
, T
stg
– 55 to 150 °C
Thermal Resistance — Junction–to–Ambient R
θJA
300 °C/W
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds T
L
260 °C
ORDERING INFORMATION
Device Reel Size Tape Width Quantity
MGSF1N02ELT1 7″ 8mm embossed tape 3000
MGSF1N02ELT3 13″ 8mm embossed tape 10,000
GreenLine is a trademark of Motorola, Inc.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MGSF1N02ELT1/D
SEMICONDUCTOR TECHNICAL DATA
3 DRAIN
1
GATE
2 SOURCE
CASE 318–08, Style 21
SOT–23 (TO–236AB)
N–CHANNEL
LOGIC LEVEL
ENHANCEMENT–MODE
TMOS MOSFET
Motorola Preferred Device
1
2
3
Motorola, Inc. 1998
