Datasheet
数据手册 > 肖特基,二极管 > ON Semiconductor > MBRS410LT3 数据手册PDF > MBRS410LT3 应用笔记 第 1/4 页

MBRS410LT3 应用笔记 - ON Semiconductor

更新时间: 2025-04-25 23:28:32 (UTC+8)

MBRS410LT3 应用笔记

页码:/4页
下载 PDF
重新加载
下载
© Semiconductor Components Industries, LLC, 2016
February, 2016 − Rev. 4
1 Publication Order Number:
MBRS410LT3/D
MBRS410L, NRVBS410L
Surface Mount
Schottky Power Rectifier
This device employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes, in surface mount
applications where compact size and weight are critical to the system.
Typical applications are AC−DC and DC−DC converters, reverse
battery protection, and “ORing” of multiple supply voltages and any
other application where performance and size are critical.
Features
Ultra Low V
F
1st in the Market Place with a 10 V
R
Schottky Rectifier
Small Compact Surface Mountable Package with J−Bend Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
Very Low Forward Voltage Drop
Excellent Ability to Withstand Reverse Avalanche Energy Transients
Guard−Ring for Stress Protection
NRVBS Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
Mechanical Characteristics
Case: Epoxy, Molded
Weight: 217 mg (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Polarity: Notch in Plastic Body Indicates Cathode Lead
ESD Ratings: Machine Model = C
Human Body Model = 3B
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
10 V
Average Rectified Forward Current
(@ T
L
= 110°C)
I
O
4.0 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
I
FSM
150 A
Operating Junction Temperature T
J
−65 to +125 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
SCHOTTKY BARRIER
RECTIFIERS
4.0 AMPERES, 10 VOLTS
www.onsemi.com
SMC
CASE 403
B4L1 = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
MARKING DIAGRAM
AYWW
B4L1G
G
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Device Package Shipping
ORDERING INFORMATION
MBRS410LT3G SMC
(Pb−Free)
2500 / Tape & Ree
l
NRVBS410LT3G SMC
(Pb−Free)
2500 / Tape & Ree
l
(Note: Microdot may be in either location)
页面指南

MBRS410LT3 数据手册 PDF

MBRS410LT3 数据手册
ON Semiconductor
5 页, 56 KB
MBRS410LT3 其它数据手册
ON Semiconductor
4 页, 55 KB
MBRS410LT3 应用笔记
ON Semiconductor
4 页, 63 KB

MBRS410 数据手册 PDF

MBRS410LT3G
数据手册
ON Semiconductor
Diode Schottky 10V 4A 2Pin SMC T/R
MBRS410ET3G
数据手册
ON Semiconductor
Diode Schottky 10V 4A 2Pin SMC T/R
MBRS410ET3
数据手册
ON Semiconductor
10V 4A 0.5V
MBRS410LT3
数据手册
ON Semiconductor
10V 4A 0.33V
Datasheet 搜索
搜索
百芯智造数据库涵盖1亿多个数据手册,每天更新超过5,000个PDF文件。
在线联系我们
黄经理 - 百芯智造销售经理在线,5 分钟前
您的邮箱 *
消息 *
发送