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Publication date: April 2002 SKL00012AED
PIN diodes
MA2SP05
Silicon epitaxial planar type
For high frequency attenuator
■ Features
• High performance forward current controlled forward dynamic
resistance
• Low terminal capacitance
• Miniature package and surface mounting type
■ Absolute Maximum Ratings T
a
= 25°C
Unit: mm
Parameter Symbol Rating Unit
Reverse voltage (DC) V
R
60 V
Forward current (DC) I
F
50 mA
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Marking Symbol: 6P
1: Anode
2: Cathode
SSMini2-F1 Package
0.80
+0.05
–0.03
0.60
+0.05
–0.03
0.12
+0.05
–0.02
1.20
+0.05
–0.03
0
+0
–0.05
0.30±0.05
0.01±0.01
1.60±0.05
0.01±0.01
1
2
0.80±0.05(0.80)
(0.60)
(0.15)
(0.60)
5˚
5˚
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
R
V
R
= 60 V 100 nA
Forward voltage (DC) V
F
I
F
= 10 mA 1.0 V
Terminal capacitance C
t
V
R
= 0 V, f = 1 MHz 2.4 pF
Forward dynamic resistance r
f
I
F
= 10 mA, f = 100 MHz 5.5 Ω
■ Electrical Characteristics T
a
= 25°C ± 3°C
