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TL/H/7424
Use the LM158/LM258/LM358 Dual, Single Supply Op Amp AN-116
National Semiconductor
Application Note 116
August 1980
Use the LM158/LM258/
LM358 Dual, Single Supply
Op Amp
INTRODUCTION
Use the LM158/LM258/LM358 dual op amp with a single
supply in place of the LM1458/LM1558 with split supply and
reap the profits in terms of:
a. Input and output voltage range down to the negative
(ground) rail
b. Single supply operation
c. Lower standby power dissipation
d. Higher output voltage swing
e. Lower input offset current
f. Generally similar performance otherwise
The main advantage, of course, is that you can eliminate the
negative supply in many applications and still retain equiva-
lent op amp performance. Additionally, and in some cases
more importantly, the input and output levels are permitted
to swing down to ground (negative rail) potential. Table I
shows the relative performance of the two in terms of guar-
anteed and/or typical specifications.
In many applications the LM158/LM258/LM358 can also
be used directly in place of LM1558 for split supply opera-
tion.
SINGLE SUPPLY OPERATION
The LM1458/LM1558 or similar op amps exhibit several im-
portant limitations when operated from a single positive (or
negative) supply. Chief among these is that input and output
signal swing is severely limited for a given supply as shown
in
Figure 1
. For linear operation, the input voltage must not
reach within 3 volts of ground or of the supply, and output
range is similarly limited to within 3–5 volts of ground or
supply. This means that operation with a
a
12V supply
could be limited as low as 2 Vp-p output swing. The LM358
however, allows a 10.5 Vp-p output swing for the same 12V
supply. Admittedly these are worst case specification limits,
but they serve to illustrate the problem.
TABLE I. Comparison of Dual Op Amps LM1458 and LM358
Characteristic LM1458 LM358
V
IO
6mVMax 7mVMax
CM V
I
24 Vp-p* 0–28.5V*
I
IO
200 nA 50 nA
I
OB
500 nA
b
500 nA
CMRR 60 dB Min
@
100 Hz 85 dB Typ
@
DC
90 dB Typ
e
n
@
1 kHz, R
GEN
10 kX 45 nV/
0
Hz Typ 40 nV/
0
Hz Typ**
Z
IN
200 MX Typ Typ 100 MX
A
VOL
20k Min 100k Typ
100k Typ
f
c
1.1 MHz Typ 1 MHz Typ**
P
BW
14 kHz Typ 11 kHz Typ**
dV
o
/dt 0.8V/ms Typ 0.5V/ms Typ**
V
o
@
R
L
e
10k/2k 24/20 Vp-p* 28.5 Vp-p
I
SC
20 mA Typ Source 20 mA Min (40 Typ)
Sink 10 mA Min (20 Typ)
PSRR
@
DC 37 dB Min 100 dB Typ
90 dB Typ
I
D
(R
L
e %
) 8 mA Max 2 mA Max
³
From laboratory measurement
*Based on V
S
e
30V on LM358 only, or V
S
e
g
15V
**From data sheet typical curves
C
1995 National Semiconductor Corporation RRD-B30M115/Printed in U. S. A.
