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First Release
Copyright © IXYS CORPORATION 2004
Features
• Built using the advantages and compatibility
of CMOS and IXYS HDMOS
TM
processes
• Latch-Up Protected up to 0.5A
• High Peak Output Current: 2A Peak
• Wide Operating Range: 4.5V to 35V
• -55°C to +125°C Extended Operating
Temperature Standard
• High Capacitive Load
Drive Capability: 1000pF in <10ns
• Matched Rise And Fall Times
• Low Propagation Delay Time
• Low Output Impedance
• Low Supply Current
• Two Drivers in Single Chip
Applications
• Driving MOSFETs and IGBTs
• Motor Controls
• Line Drivers
• Pulse Generators
• Local Power ON/OFF Switch
• Switch Mode Power Supplies (SMPS)
• DC to DC Converters
• Pulse Transformer Driver
• Class D Switching Amplifiers
General Description
The IXDN402/IXDI402/IXDF402 consists of two 2 Amp
CMOS high speed MOSFET drivers. Each output can
source and sink 2A of peak current while producing voltage
rise and fall times of less than 15ns to drive the latest IXYS
MOSFETs & IGBTs. The input of the driver is TTL or CMOS
compatible and is fully immune to latch up over the entire
operating range. A patent-pending circuit virtually eliminates
cross conduction and current shoot-through. Improved
speed and drive capabilities are further enhanced by very
low and matched rise and fall times.
The IXDN402 is configured as a dual non-inverting gate
driver, the IXDI402 as a dual inverting gate driver, and the
IXDF402 as a dual inverting + non-inverting gate driver.
The IXDN402/IXDI402/IXDF402 family are available in the
standard 8 pin P-DIP (PI), SOIC-8 (SIA) and SOIC-16 (SIA-
16) packages. For enhanced thermal performance, the
SOIC-8 and SOIC-16 are also available with an exposed
grounded backmetal package as the SI and SI-16 respec-
tively.
IXDN402 / IXDI402 / IXDF402
2 Ampere Dual Low-Side Ultrafast MOSFET Drivers
Ordering Information
NOTE: Mounting or solder tabs on all packages are connected to ground
Part Number Package Type Temp. Range Configuration
IXDN402PI 8-Pin PDIP
IXDN402SI 8-Pin SOIC with Grounded Backmetal
IXDN402SIA 8-Pin SOIC
IXDN402SI-16 16-Pin SOIC with Grounded Backmetal
IXDN402SIA-16 16-Pin SOIC
-55
°
C to
+125
°
C
Dual Non
Inverting
IXDI402PI 8-Pin PDIP
IXDI402SI 8-Pin SOIC with Grounded Backmetal
IXDI402SIA 8-Pin SOIC
IXDI402SI-16 16-Pin SOIC with Grounded Backmetal
IXDI402SIA-16 16-Pin SOIC
-55
°
C to
+125
°
C
Dual Inverting
IXDF402PI 8-Pin PDIP
IXDF402SI 8-Pin SOIC with Grounded Backmetal
IXDF402SIA 8-Pin SOIC
IXDF402SI-16 16-Pin SOIC with Grounded Backmetal
IXDF402SIA-16 16-Pin SOIC
-55
°
C to
+125
°
C
Inverting + Non
Inverting
DS99015B(08/04)
