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Parameter Max. Units
V
DS
Drain- Source Voltage -30 V
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ -10V -3.0
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ -10V -2.4 A
I
DM
Pulsed Drain Current -24
P
D
@T
A
= 25°C Power Dissipation 1.25
P
D
@T
A
= 70°C Power Dissipation 0.80
Linear Derating Factor 10 mW/°C
V
GS
Gate-to-Source Voltage ± 20 V
T
J,
T
STG
Junction and Storage Temperature Range -55 to + 150 °C
04/30/03
Parameter Max. Units
R
θJA
Maximum Junction-to-Ambient 100 °C/W
Thermal Resistance
Absolute Maximum Ratings
W
www.irf.com 1
IRLML5203
HEXFET
®
Power MOSFET
These P-channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This
benefit provides the designer with an extremely efficient
device for use in battery and load management
applications.
A thermally enhanced large pad leadframe has been
incorporated into the standard SOT-23 package to
produce a HEXFET Power MOSFET with the industry's
smallest footprint. This package, dubbed the Micro3
TM
,
is ideal for applications where printed circuit board
space is at a premium. The low profile (<1.1mm) of
the Micro3 allows it to fit easily into extremely thin
application environments such as portable electronics
and PCMCIA cards. The thermal resistance and
power dissipation are the best available.
Description
l Ultra Low On-Resistance
l P-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Low Gate Charge
PD - 93967A
V
DSS
R
DS(on)
max (mW) I
D
-30V 98@V
GS
= -10V -3.0A
165@V
GS
= -4.5V -2.6A
S
G
1
2
D3
Micro3
TM
PROVISIONAL
