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INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
3/17/04
Features
• Low V
CE
(on)
Non Punch Through IGBT Technology.
• Low Diode V
F
.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive V
CE (on)
Temperature Coefficient.
• TO-247AD Package
• Lead-Free
www.irf.com 1
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
IRGP30B60KD-EP
E
G
n-channel
C
V
CES
= 600V
I
C
= 30A, T
C
=100°C
t
sc
> 10µs, T
J
=150°C
V
CE(on)
typ. = 1.95V
TO-247AD
Parameter Max. Units
V
CES
Collector-to-Emitter Voltage 600 V
I
C
@ T
C
= 25°C Continuous Collector Current 60
I
C
@ T
C
= 100°C Continuous Collector Current 30
I
CM
Pulsed Collector Current 120
I
LM
Clamped Inductive Load Current 120 A
I
F
@ T
C
= 25°C Diode Continuous Forward Current 60
I
F
@ T
C
= 100°C Diode Continuous Forward Current 30
I
FM
Diode Maximum Forward Current 120
V
GE
Gate-to-Emitter Voltage ±20 V
P
D
@ T
C
= 25°C Maximum Power Dissipation 304
P
D
@ T
C
= 100°C Maximum Power Dissipation 122
T
J
Operating Junction and -55 to +150
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf•in (1.1N•m)
Absolute Maximum Ratings
W
Parameter Min. Typ. Max. Units
R
θJC
Junction-to-Case - IGBT ––– ––– 0.41
R
θJC
Junction-to-Case - Diode ––– ––– 1.32
R
θCS
Case-to-Sink, flat, greased surface ––– 0.24 –––
R
θJA
Junction-to-Ambient, typical socket mount ––– ––– 40
Wt Weight ––– 6.0 ––– g
°C/W
Thermal Resistance
PD - 95120
