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11/29/00
IRFR220N
IRFU220N
SMPS MOSFET
HEXFET
®
Power MOSFET
l High frequency DC-DC converters
Benefits
Applications
l Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
V
DSS
R
DS(on)
max (mΩ) I
D
200V 600 5.0A
Typical SMPS Topologies
l Telecom 48V input Forward Converters
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 5.0
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 3.5 A
I
DM
Pulsed Drain Current 20
P
D
@T
C
= 25°C Power Dissipation 43 W
Linear Derating Factor 0.71 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
dv/dt Peak Diode Recovery dv/dt 7.5 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Absolute Maximum Ratings
PD- 94048
Notes through are on page 10
D-Pak
IRFR220N
I-Pak
IRFU220N
