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IRFB9N60APBF 应用笔记 - VISHAY

制造商:
VISHAY
分类:
MOS管,场效应管,晶体管,金属氧化物,FET
封装
TO-220-3
描述:
TO-220-3 N-CH 600V 9.2A 750mΩ
页面指南:
封装外形尺寸在 8页

丝印信息在 8页

参数规格在 1页

应用领域在 1页

更新时间： 2025-05-08 04:57:34 (UTC+8)

应用领域

IRFB9N60APBF 应用笔记

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11/7/03

www.irf.com 1

IRFB9N60APbF

PD - 94821

-22

SMPS MOSFET

HEXFET

Power MOSFET

 Switch Mode Power Supply ( SMPS )

 Uninterruptable Power Supply

 High speed power switching

 Lead-Free

Benefits

Applications

 Low Gate Charge Qg results in Simple

Drive Requirement

 Improved Gate, Avalanche and dynamic

dv/dt Ruggedness

 Fully Characterized Capacitance and

Avalanche Voltage and Current

DSS

Rds(on) max I

600V 0.75Ω 9.2A

Applicable Off Line SMPS Topologies:

 Active Clamped Forward

 Main Switch

Notes  through  are on page 8

SDG

Parameter Max. Units

@ T

= 25°C Continuous Drain Current, V

@ 10V 9.2

@ T

= 100°C Continuous Drain Current, V

@ 10V 5.8 A

Pulsed Drain Current  37

= 25°C Power Dissipation 170 W

Linear Derating Factor 1.3 W/°C

Gate-to-Source Voltage ± 30 V

dv/dt Peak Diode Recovery dv/dt  5.0 V/ns

Operating Junction and -55 to + 150

STG

Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )

°C

Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m)

Absolute Maximum Ratings

WWW.100Y.COM.TW WWW.100Y.COM.TW WWW.100Y.COM.TW

页面指南

・封装外形尺寸在 8页
・丝印信息在 8页
・参数规格在 1页
・应用领域在 1页

页面指南

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IRFB9N60APBF 数据手册 PDF

IRFB9N60APBF 数据手册

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IRFB9N60 数据手册 PDF

IRFB9N60
数据手册

IRF

Power MOSFET(Vdss=600V, Rds(on)=0.75Ω, Id=9.2A)

IRFB9N60
产品目录

Vishay Semiconductor

IRFB9N60APBF
数据手册

VISHAY

TO-220-3 N-CH 600V 9.2A 750mΩ

IRFB9N60APBF
数据手册

Vishay Semiconductor

MOSFET, Power; N-Ch; VDSS 600V; RDS(ON) 0.75Ω; ID 9.2A; TO-220AB; PD 170W; VGS +/-30V

IRFB9N60APBF
数据手册

Vishay Siliconix