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数据手册 > IGBT,晶体管,绝缘栅双极型 > Infineon > IKW75N65EL5 数据手册PDF > IKW75N65EL5 应用笔记 第 1/29 页
IKW75N65EL5
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IKW75N65EL5 应用笔记 - Infineon

  • 制造商:
    Infineon
  • 分类:
    IGBT,晶体管,绝缘栅双极型
  • 封装
    TO-247-3
  • 描述:
    Infineon’s new L5 low saturation voltage (V CE(sat)) TRENCHSTOP™ IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. Optimization of the carrier profile of the innovative 55µm TRENCHSTOP™ 5 thin wafer technology allows to reduce conduction losses to the intrinsically low level – 1.05V for 30A IGBT and 1.1V for 75A IGBT.
更新时间: 2025-04-28 14:05:26 (UTC+8)

IKW75N65EL5 应用笔记

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Application Note 1 V1.0, 2015-09-18
About this document
Scope and purpose
This application note is intended to provide an explanation of the parameters and diagrams given in the
datasheet of Infineon discrete IGBTs. The designer of power electronic systems requiring an IGBT will be
provided with background information to be able to use the datasheet in the proper way.
The following information is given as a hint for the utilization of the IGBT device and shall not be regarded as
a description or warranty of a certain functionality, condition or quality of the device.
Table of contents
1 Introduction ............................................................................................................... 2
1.1 Status of datasheets ............................................................................................................................ 2
1.2 Type designation ................................................................................................................................. 3
2 IGBT datasheet parameters .......................................................................................... 5
2.1 Maximum ratings ................................................................................................................................. 5
2.2 Static characteristics ........................................................................................................................... 9
2.3 Dynamic characteristics .................................................................................................................... 13
2.4 Switching characteristics .................................................................................................................. 16
2.5 Other parameters and figures ........................................................................................................... 20
3 Symbols and terms .................................................................................................... 26
4 References ............................................................................................................... 28
Discrete IGBT
Explanation of discrete IGBTs' datasheets
Application Note

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