Datasheet
数据手册 > TVS,二极管,瞬态抑制,TVS管,瞬态电压抑制器 > Infineon > IDW30C65D1XKSA1 数据手册PDF > IDW30C65D1XKSA1 应用笔记 第 1/13 页
IDW30C65D1XKSA1
¥ 23.41
百芯的价格

IDW30C65D1XKSA1 应用笔记 - Infineon

更新时间: 2025-04-26 04:58:39 (UTC+8)

IDW30C65D1XKSA1 应用笔记

页码:/13页
下载 PDF
重新加载
下载
1 Revision 2.0, 2014-07-17
About this document
Scope and purpose
This document introduces the Rapid Diodes, high voltage hyperfast silicon diodes from Infineon. Based on
ultra-thin wafer technology, two families of Rapid Diodes are released to cover different target application
requirements. This application note is designed to show how the Rapid Diode improves existing system
solutions in terms of system efficiency.
Intended audience
Design engineers who want to improve their system for reliability and efficiency
Table of Contents
1 Description of Technology and Product Family ............................................................... 2
1.1 V
F
- Q
rr
Rapid Diode Trade-off .............................................................................................................. 2
1.2 Relative Variation of Switching Parameters as a Function of Temperature ..................................... 3
2 Application of Rapid Diodes ......................................................................................... 4
2.1 Rapid 1 Diode Static and Dynamic Performance ............................................................................... 5
2.2 Maximum Power Dissipation .............................................................................................................. 6
2.3 Rapid 2 Diode PFC Efficiency Tests ..................................................................................................... 7
2.3.1 Diode Reverse Recovery and PFC Efficiency Result ..................................................................... 7
2.3.2 Rapid 2 Diodes Electrical Parameter Stability ............................................................................. 8
3 Portfolio .................................................................................................................... 9
4 Summary ................................................................................................................. 10
5 References ............................................................................................................... 11
6 Revision History ........................................................................................................ 12
650V Rapid Diode for Industrial
Applications
Application Note
页面指南

IDW30C65D1XKSA1 数据手册 PDF

IDW30C65D1XKSA1 数据手册
Infineon
11 页, 1622 KB
IDW30C65D1XKSA1 产品设计参考
Infineon
48 页, 7466 KB
IDW30C65D1XKSA1 其它数据手册
Infineon
4 页, 449 KB
IDW30C65D1XKSA1 应用笔记
Infineon
13 页, 660 KB

IDW30C65D1 数据手册 PDF

IDW30C65D1
数据手册
Infineon
Rapid 1 and Rapid 2 power silicon diodes fill the gap between the SiC diodes and emitter-controlled diodes and now come in common cathode configuration with up to 80A/650V, allowing design optimization for more compact dimensions, easier assembly and consequently lower costs.
IDW30C65D1XKSA1
数据手册
Infineon
Diode Switching 650V 30A 3Pin TO-247 Tube
Datasheet 搜索
搜索
百芯智造数据库涵盖1亿多个数据手册,每天更新超过5,000个PDF文件。
在线联系我们
黄经理 - 百芯智造销售经理在线,5 分钟前
您的邮箱 *
消息 *
发送