下载
AFT27S006NT1
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
This 28.8 dBm RF power LDMOS transis tor is des igned for c ellular base
station applications covering the frequency range of 728 to 3600 MHz.
Typical Single--Carrier W--CDMA Performance: V
DD
=28Vdc,
I
DQ
=65mA,P
out
= 28.8 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.
(1)
700 MHz
Frequency
G
ps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
728 MHz 24.3 20.2 9.9 --45.6 -- 1 9
748 MHz 24.4 19.9 9.9 --45.9 -- 1 7
768 MHz 24.2 19.4 9.8 --46.2 -- 1 3
Typical Single--Carrier W--CDMA Performance: V
DD
=28Vdc,
I
DQ
=70mA,P
out
= 28.8 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.
(1)
2100 MHz
Frequency
G
ps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
2110 MHz 22.2 18.3 9.2 --42.3 -- 1 4
2140 MHz 22.8 19.8 9.5 --44.6 -- 1 7
2170 MHz 22.5 20.2 9.3 --46.0 -- 1 3
2300 MHz
Frequency
G
ps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
2300 MHz 22.9 20.9 9.8 --41.0 -- 1 0
2350 MHz 23.5 21.5 9.4 --40.8 -- 2 4
2400 MHz 23.0 22.4 8.9 --41.0 -- 11
2600 MHz
Frequency
G
ps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
2500 MHz 20.4 19.4 9.5 --44.0 -- 7
2600 MHz 22.0 21.2 9.1 --42.5 -- 1 6
2700 MHz 20.9 20.3 8.5 --40.9 -- 7
3500 MHz
Frequency
G
ps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
3400 MHz 16.1 14.3 9.0 --44.1 -- 9
3500 MHz 17.9 16.4 9.1 --46.2 -- 1 3
3600 MHz 16.0 16.7 8.7 --44.4 -- 4
1. All data measured in fixture with device soldered to heatsink.
Features
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
Designed for Digital Predistortion Error Correction Systems
Universal Broadband Driver
Document Number: AFT27S006N
Rev. 4, 12/2015
Freescale Semiconductor
Technical Data
728--3600 MHz, 28.8 dBm AVG., 28 V
AIRFAST RF POWER LDMOS
TRANSISTOR
AFT27S006NT1
PLD--1.5W
PLASTIC
Figure 1. Pin Connections
(Top View)
Note: The center pad on the backside of the
package is the source terminal for the
transistor.
RF
out
/V
DS
RF
in
/V
GS
Freescale Semiconductor, Inc., 2013–2015.
A
ll rights reserved.
