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©2001 Fairchild Semiconductor Corporation HGT1S3N60A4DS, HGTP3N60A4D Rev. B
HGT1S3N60A4DS, HGTP3N60A4D
600V, SMPS Series N-Channel IGBT with
Anti-Parallel Hyperfast Diode
The HGT1S3N60A4DS and the HGTP3N60A4D are MOS
gated high voltage switching devices combining the best
features of MOSFETs and bipolar transistors. These devices
have the high input impedance of a MOSFET and the low
on-state conduction loss of a bipolar transistor. The much
lower on-state voltage drop varies only moderately between
25
o
C and 150
o
C. The IGBT used is the development type
TA49327. The diode used in anti-parallel is the development
type TA49369.
This IGBT is ideal for many high voltage switching
applications operating at high frequencies where low
conduction losses are essential.
This device has been
optimized for high frequency switch mode power
supplies
.
Formerly Developmental Type TA49329.
Symbol
Features
• >100kHz Operation At 390V, 3A
• 200kHz Operation At 390V, 2.5A
• 600V Switching SOA Capability
• Typical Fall Time . . . . . . . . . . . . . . . . . 70ns at T
J
= 125
o
C
• Low Conduction Loss
•
Temperature Compensating
SABER™ Model
www.Fairchildsemi.com
Packaging
JEDEC TO-263AB
JEDEC TO-220AB
Ordering Information
PART NUMBER PACKAGE BRAND
HGT1S3N60A4DS TO-263AB 3N60A4D
HGTP3N60A4D TO-220AB 3N60A4D
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB in tape and reel, i.e., HGT1S3N60A4DS9A.
C
E
G
COLLECTOR
(FLANGE)
E
G
C
G
E
COLLECTOR
(FLANGE)
Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027
Data Sheet December 2001
