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DMN3730UFB-7 应用笔记

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DMN3730UFB
Document number: DS35018 Rev. 4 - 2
1 of 8
www.diodes.com
June 2015
© Diodes Incorporated
DMN3730UFB
A Product Line of
Diodes Incorporated
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(on)
30V
460mΩ @ V
GS
= 4.5V
560mΩ @ V
GS
= 2.5V
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Load Switch
Portable Applications
Power Management Functions
Features and Benefits
0.5mm ultra low profile package for thin application
0.6mm
2
package footprint, 10 times smaller than SOT23
Low V
GS(th),
can be driven directly from a battery
Low R
DS(on)
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
ESD Protected Gate 2kV
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: X1-DFN1006-3
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish NiPdAu over Copper Leadframe; Solderable
per MIL-STD-202, Method 208
Weight: 0.001 grams (Approximate)
Ordering Information (Note 4)
Part Number
Marking
Reel size (inches)
Tape width (mm)
Quantity per reel
DMN3730UFB-7
NE
7
8
3,000
DMN3730UFB-7B
NE
7
8
10,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
X1-DFN1006-3
Equivalent Circuit
Top View
Internal Schematic
Bottom View
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
ESD PROTECTED TO 2kV
D
S
G
e4
页面指南

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