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DMN26D0UFB4
Document number: DS31775 Rev. 11 - 2
1 of 7
www.diodes.com
May 2015
© Diodes Incorporated
DMN26D0UFB4
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(on)
I
D
T
A
= +25°C
20V
3.0Ω @ V
GS
= 4.5V
240mA
6.0Ω @ V
GS
= 1.8V
170mA
Description
This new generation MOSFET is designed to minimize the on-state
resistance (R
DS(ON)
) and yet maintain superior switching performance,
making it ideal for high-efficiency power management applications.
Applications
DC-DC Converters
Power Management Functions
Features and Benefits
N-Channel MOSFET
Low On-Resistance
Very Low Gate Threshold Voltage, 1.05V Max
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package, 0.4mm Maximum Package
Height
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: X2-DFN1006-3
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – NiPdAu over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.001 grams (Approximate)
Ordering Information (Note 4)
Part Number
Case
Packaging
DMN26D0UFB4-7
X2-DFN1006-3
3,000/Tape & Reel
DMN26D0UFB4-7B
X2-DFN1006-3
10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
X2-DFN1006-3
Bottom View
Equivalent Circuit
Top View
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
D
S
G
ESD PROTECTED
e3
e4
