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DMN2500UFB4
Document number: DS35724 Rev. 5 - 2
1 of 7
www.diodes.com
May 2015
© Diodes Incorporated
DMN2500UFB4
ADVANCE INFO R MA T I O N
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(on) max
I
D
T
A
= +25°C
20V
0.4Ω @ V
GS
= 4.5V
1A
0.7 Ω @ V
GS
= 1.8V
0.8A
Description and Applications
This new generation MOSFET is designed to minimize the on-state
resistance (R
DS(on)
) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
DC-DC Converters
Power Management Functions
Features and Benefits
Low On-Resistance
Very Low Gate Threshold Voltage V
GS(TH)
, 1.0V Max.
Low Input Capacitance
Fast Switching Speed
Ultra-Small Surfaced Mount Package
Ultra-Low Package Profile, 0.4mm Maximum Package Height
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: X2-DFN1006-3
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – NiPdAu over Copper Leadframe; Solderable
per MIL-STD-202, Method 208
Weight: 0.001 grams (Approximate)
Ordering Information (Note 3)
Part Number
Case
Packaging
DMN2500UFB4-7
X2-DFN1006-3
3,000/Tape & Reel
DMN2500UFB4-7B
X2-DFN1006-3
10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-
free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br +
Cl) and <1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
X2-DFN1006-3
Top View
Internal Schematic
Bottom View
D
S
G
ESD PROTECTED
S o u rce
E Q U IV A L E N T C IR C U IT
G ate
P ro te c tio n
D iod e
G a te
D ra in
e4
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