下载
www.clare.com
DS-CPC3703C-R02.3
1
CPC3703C
N-Channel Depletion-Mode
Vertical DMOS FETs
• Ignition modules
• Normally-on switches
• Solid state relays
• Converters
• Telecommunications
• Power supply
• Depletion mode device offers low R
DS(ON)
at cold
temperatures
• Low on resistance 4 ohms max. at 25
o
C
• High input impedance
• High breakdown voltage 250V
• Low V
GS(of
f)
voltage -1.6 to -3.9V
• Small package size SOT-89
Applications
Features
Description
Package Pinout
(SOT-89)
G
D
S
D
The CPC3703C is an N-channel depletion mode field
effect transistor (FET) that utilizes Clare’s proprietary
third generation vertical DMOS process. Third
generation process realizes world class, high voltage
MOSFET performance in an economical silicon gate
process. Our vertical DMOS process yields a robust
device for high power applications with high input
impedance. The CPC3703C is a highly reliable FET
device that has been used extensively in Clare’s solid
state relays for industrial and telecommunications
applications.
This device excels in power applications requiring
low drain-source resistance, particularly in cold
environments such as automotive ignition modules.
The CPC3703C offers a low 4 ohm maximum
on-state resistance at 25
o
C.
The CPC3703C has a minimum breakdown voltage
of 250V and is available in an SOT-89 package. As
with all MOS devices, the FET structure prevents
thermal runaway and thermal-induced secondary
breakdown.
Part # Description
CPC3703C SOT-89 (100/Tube)
CPC3703CTR SOT-89 (2000/Reel)
Ordering Information
90%
10%
90%
90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
0V
V
DD
R
gen
0V
-10V
Switching Waveforms and Test Circuit
BV
DSX
/R
DS(ON)
I
DSS
Package
BV
DGX
(max)
(min)
250V 4.0Ω 300mA SOT-89
