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Subject to change without notice.
www.cree.com/wireless
CGH40010
10 W, DC - 6 GHz, RF Power GaN HEMT
Cree’s CGH40010 is an unmatched, gallium nitride (GaN) high electron
mobility transistor (HEMT). The CGH40010, operating from a 28 volt
rail, offers a general purpose, broadband solution to a variety of RF and
microwave applications. GaN HEMTs offer high efciency, high gain and
wide bandwidth capabilities making the CGH40010 ideal for linear and
compressed amplier circuits. The transistor is available in both screw-
down, ange and solder-down, pill packages.
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FEATURES
• Up to 6 GHz Operation
• 16 dB Small Signal Gain at 2.0 GHz
• 14 dB Small Signal Gain at 4.0 GHz
• 13 W typical P
SAT
• 65 % Efciency at P
SAT
• 28 V Operation
APPLICATIONS
• 2-Way Private Radio
• Broadband Ampliers
• Cellular Infrastructure
• Test Instrumentation
• Class A, AB, Linear ampliers suitable for
OFDM, W-CDMA, EDGE, CDMA waveforms
Package Types: 440166, & 440196
PN’s: CGH40010F & CGH40010P
