V1.0, 2004-11-19
Page 1
HITFET
Ò
II.Generation BTS 3207N
Smart Lowside Power Switch
Product Summary
Drain source voltage V
DS
42 V
On-state resistance R
DS
(
on
)
500 mW
Nominal load current I
D
(
Nom
)
0.64 A
Clamping energy E
A
S
150 mJ
Features
· Logic Level Input
· Input Protection (ESD)
· Thermal shutdown with
auto restart
· Overload protection
· Short circuit protection
· Overvoltage protection
· Current limitation
· Analog driving possible
VPS05163
1
2
3
4
Application
· All kinds of resistive, inductive and capacitive loads in switching
or linear applications
· µC compatible power switch for 12 V DC applications
· Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS
Ò
technology. Fully protected by embedded
protection functions.
Gate-Driving
Unit
ESD
Overload
Protection
Over-
temperature
Protection
Short circuit
Protection
Overvoltage-
Protection
Current
Limitation
M
Vbb
In
Source
Drain
HITFET
â
Pin 1
Pin 2 and 4 (TAB)
Pin 3
