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数据手册 > TRIACs,可控硅,双向可控硅,双向晶闸管 > ST Microelectronics > BTA12-700CWRG 数据手册PDF > BTA12-700CWRG 应用笔记 第 1/5 页
BTA12-700CWRG
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BTA12-700CWRG 应用笔记 - ST Microelectronics

更新时间: 2025-06-16 06:43:09 (UTC+8)

BTA12-700CWRG 应用笔记

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BTA12 BW/CW
BTB12 BW/CW
March 1995
SNUBBERLESS TRIACS
Symbol Parameter Value Unit
I
T(RMS)
RMS on-state current
(360° conduction angle)
BTA Tc = 85 °C12 A
BTB Tc = 95 °C
I
TSM
Non repetitive surge peak on-state current
( Tj initial = 25°C)
tp = 8.3 ms 126 A
tp = 10 ms 120
I
2
tI
2
t value tp = 10 ms 72 A
2
s
dI/dt Critical rate of rise of on-state current
Gate supply : I
G
= 500mA di
G
/dt = 1A/µs
Repetitive
F = 50 Hz
20 A/µs
Non
Repetitive
100
Tstg
Tj
Storage and operating junction temperature range - 40 to + 150
- 40 to + 125
°C
°C
Tl Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
260 °C
TO220AB
(Plastic)
A1
A2
G
.HIGH COMMUTATION : (dI/dt)c>12A/ms
withoutsnubber
.HIGH SURGE CURRENT : I
TSM
=120A
.V
DRM
UPTO 800V
.BTAFamily :
INSULATINGVOLTAGE= 2500V
(RMS)
(ULRECOGNIZED : E81734)
DESCRIPTION
Symbol Parameter BTA / BTB12-... BW/CW Unit
400 600 700 800
V
DRM
V
RRM
Repetitive peak off-state voltage
Tj = 125 °C
400 600 700 800 V
ABSOLUTE RATINGS (limiting values)
FEATURES
The BTA/BTB12 BW/CW triac family are high per-
formance glass passivatedchips technology.
The SNUBBERLESS concept offer suppression
of RC network and it is suitable for application
such as phase control and static switching on in-
ductiveor resistive load.
1/5
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