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© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 14
1 Publication Order Number:
BDX33B/D
BDX33B, BDX33C (NPN)
BDX34B, BDX34C (PNP)
Darlington Complementary
Silicon Power Transistors
These devices are designed for general purpose and low speed
switching applications.
Features
• High DC Current Gain − h
FE
= 2500 (typ.) at I
C
= 4.0
• Collector−Emitter Sustaining Voltage at 100 mAdc
V
CEO(sus)
= 80 Vdc (min) − BDX33B, BDX334B
= 100 Vdc (min) − BDX33C, BDX334C
• Low Collector−Emitter Saturation Voltage
V
CE(sat)
= 2.5 Vdc (max) at I
C
= 3.0 Adc
− BDX33B, 33C/34B, 34C
• Monolithic Construction with Build−In Base−Emitter Shunt Resistors
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage
BDX33B, BDX34B
BDX33C, BDX34C
V
CEO
80
100
Vdc
Collector−Base Voltage
BDX33B, BDX34B
BDX33C, BDX34C
V
CB
80
100
Vdc
Emitter−Base Voltage V
EB
5.0 Vdc
Collector Current
Continuous
Peak
I
C
10
15
Adc
Base Current I
B
0.25 Adc
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
70
0.56
W
W/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−65 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristics Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
1.78 °C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
DARLINGTON
10 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
80−100 VOLTS, 65 WATTS
TO−220
CASE 221A
STYLE 1
1
www.onsemi.com
MARKING DIAGRAM
BDX3xy = Device Code
x = 3 or 4
y = B or C
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
2
3
BDX3xyG
AY WW
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
