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© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 13
1 Publication Order Number:
BD787/D
BD787G (NPN),
BD788G(PNP)
Complementary Plastic
Silicon Power Transistors
These devices are designed for lower power audio amplifier and
low current, high−speed switching applications.
Features
• Low Collector−Emitter Sustaining Voltage
• High Current−Gain − Bandwidth Product
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
60 Vdc
Collector−Base Voltage V
CBO
80 Vdc
Emitter Base Voltage V
EBO
6.0 Vdc
Collector Current − Continuous I
C
4.0 Adc
Collector Current − Peak I
CM
8.0 Adc
Base Current − Continuous I
B
1.0 Adc
Total Power Dissipation
@ T
C
= 25_C
Derate above 25_C
P
D
15
0.12
W
mW/_C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–65 to +150
_C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
8.34
_C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
ORDERING INFORMATION
4 AMPERES
POWER TRANSISTORS
COMPLEMENTARY SILICON
60 VOLTS, 15 WATTS
http://onsemi.com
BD787G
TO−225
(Pb−Free)
500 Units/Box
MARKING DIAGRAM
Y = Year
WW = Work Week
BD78x = Device Code
x = 7 or 8
G = Pb−Free Package
BD788G
TO−225
(Pb−Free)
500 Units/Box
3
BASE
EMITTER 1
COLLECTOR 2, 4
3
BASE
EMITTER 1
COLLECTOR 2, 4
PNP
NPN
TO−225
CASE 77−09
STYLE 1
1
2
3
YWW
BD78xG
