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© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 17
1 Publication Order Number:
BD437/D
BD435G, BD437G, BD439G,
BD441G
Plastic Medium-Power
Silicon NPN Transistors
This series of plastic, medium−power silicon NPN transistors can be
used for amplifier and switching applications.
Features
• Complementary Types are BD438 and BD442
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage
BD435G
BD437G
BD439G
BD441G
V
CEO
32
45
60
80
Vdc
Collector−Base Voltage
BD435G
BD437G
BD439G
BD441G
V
CBO
32
45
60
80
Vdc
Emitter−Base Voltage V
EBO
5.0 Vdc
Collector Current I
C
4.0 Adc
Base Current I
B
1.0 Adc
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
P
D
36
288
W
W/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
–55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
3.5 °C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
Device Package Shipping
4.0 AMPERES
POWER TRANSISTORS
NPN SILICON
MARKING DIAGRAM
ORDERING INFORMATION
Y = Year
WW = Work Week
BD4xx = Device Code
xx = 35, 37, 37T, 39, 41
G = Pb−Free Package
BD435G TO−225
(Pb−Free)
500 Units/Box
BD437G TO−225
(Pb−Free)
500 Units/Box
BD437TG TO−225
(Pb−Free)
50 Units/Rail
BD439G TO−225
(Pb−Free)
500 Units/Box
BD441G TO−225
(Pb−Free)
500 Units/Box
BASE 3
EMITTER 1
COLLECTOR 2, 4
TO−225
CASE 77−09
STYLE 1
1
2
3
YWW
BD4xxG
