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©2000 Fairchild Semiconductor International Rev. A, February 2000
BD234/236/238
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Electrical Characteristics
T
C
=25°C unless otherwise noted
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage
: BD234
: BD236
: BD238
- 45
- 60
- 100
V
V
V
V
CEO
Collector-Emitter Voltage
: BD234
: BD236
: BD238
- 45
- 60
- 80
V
V
V
V
CER
Collector-Emitter Voltage
: BD234
: BD236
: BD238
- 45
- 60
- 100
V
V
V
V
EBO
Emitter-Base Voltage - 5 V
I
C
Collector Current (DC) - 2 A
I
CP
*Collector Current (Pulse) - 6 A
P
C
Collector Dissipation (T
C
=25°C) 25 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
V
CEO
(sus) * Collector-Emitter Sustaining Voltage
: BD234
: BD236
: BD238
I
C
= - 100mA, I
B
= 0 - 45
- 60
- 80
V
V
V
I
CBO
Collector Cut-off Current
: BD234
: BD236
: BD238
V
CB
= - 45V, I
E
= 0
V
CB
= - 60V, I
E
= 0
V
CB
= - 100V, I
E
= 0
- 100
- 100
- 100
µA
µA
µA
I
EBO
Emitter Cut-off Current V
EB
= - 5V, I
C
= 0 - 1 mA
h
FE
* DC Current Gain V
CE
= - 2V, I
C
= - 150mA
V
CE
= - 2V, I
C
= - 1A
40
25
V
CE
(sat) * Collector-Emitter Saturation Voltage I
C
= - 1A , I
B
= - 0.1A - 0.6 V
V
BE
(on) * Base-Emitter ON Voltage V
CE
= - 2V, I
C
= - 1A - 1.3 V
f
T
Current Gain Bandwidth Product V
CE
= - 10V, I
C
= -250mA 3 MHz
BD234/236/238
Medium Power Linear and Switching
Applications
• Complement to BD 233/235/237 respectively
1
TO-126
1. Emitter 2.Collector 3.Base
