Datasheet
数据手册 > 双极性,晶体管,BJT,双极型 > Infineon > BCV27E6327HTSA1 数据手册PDF > BCV27E6327HTSA1 应用笔记 第 1/25 页
BCV27E6327HTSA1
¥ 37.35
百芯的价格

BCV27E6327HTSA1 应用笔记 - Infineon

更新时间: 2025-04-24 06:03:12 (UTC+8)

BCV27E6327HTSA1 应用笔记

页码:/25页
下载 PDF
AFT27S006NT1
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power LDMOS Transistor
N--Channel Enhancement--Mode Lateral MOSFET
This 28.8 dBm RF power LDMOS transis tor is des igned for c ellular base
station applications covering the frequency range of 728 to 3600 MHz.
Typical Single--Carrier W--CDMA Performance: V
DD
=28Vdc,
I
DQ
=65mA,P
out
= 28.8 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.
(1)
700 MHz
Frequency
G
ps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
728 MHz 24.3 20.2 9.9 --45.6 -- 1 9
748 MHz 24.4 19.9 9.9 --45.9 -- 1 7
768 MHz 24.2 19.4 9.8 --46.2 -- 1 3
Typical Single--Carrier W--CDMA Performance: V
DD
=28Vdc,
I
DQ
=70mA,P
out
= 28.8 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01%
Probability on CCDF.
(1)
2100 MHz
Frequency
G
ps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
2110 MHz 22.2 18.3 9.2 --42.3 -- 1 4
2140 MHz 22.8 19.8 9.5 --44.6 -- 1 7
2170 MHz 22.5 20.2 9.3 --46.0 -- 1 3
2300 MHz
Frequency
G
ps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
2300 MHz 22.9 20.9 9.8 --41.0 -- 1 0
2350 MHz 23.5 21.5 9.4 --40.8 -- 2 4
2400 MHz 23.0 22.4 8.9 --41.0 -- 11
2600 MHz
Frequency
G
ps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
2500 MHz 20.4 19.4 9.5 --44.0 -- 7
2600 MHz 22.0 21.2 9.1 --42.5 -- 1 6
2700 MHz 20.9 20.3 8.5 --40.9 -- 7
3500 MHz
Frequency
G
ps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
3400 MHz 16.1 14.3 9.0 --44.1 -- 9
3500 MHz 17.9 16.4 9.1 --46.2 -- 1 3
3600 MHz 16.0 16.7 8.7 --44.4 -- 4
1. All data measured in fixture with device soldered to heatsink.
Features
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
Designed for Digital Predistortion Error Correction Systems
Universal Broadband Driver
Document Number: AFT27S006N
Rev. 4, 12/2015
Freescale Semiconductor
Technical Data
728--3600 MHz, 28.8 dBm AVG., 28 V
AIRFAST RF POWER LDMOS
TRANSISTOR
AFT27S006NT1
PLD--1.5W
PLASTIC
Figure 1. Pin Connections
(Top View)
Note: The center pad on the backside of the
package is the source terminal for the
transistor.
RF
out
/V
DS
RF
in
/V
GS
Freescale Semiconductor, Inc., 2013–2015.
A
ll rights reserved.
页面指南

BCV27E6327HTSA1 数据手册 PDF

BCV27E6327HTSA1 数据手册
Infineon
7 页, 524 KB
BCV27E6327HTSA1 其它数据手册
Infineon
34 页, 206 KB
BCV27E6327HTSA1 应用笔记
Infineon
25 页, 1072 KB

BCV27E6327 数据手册 PDF

BCV27E6327
数据手册
Infineon
SOT-23 NPN 30V 0.5A
BCV27 E6327 数据手册
Infineon
NPN DARLINGTON 30V 0,5A SOT23 **
BCV 27 E6327 数据手册
Infineon
Darlington Transistors NPN Silicn Darlingtn TRANSISTOR
BCV27E6327
数据手册
Nexperia
BCV27E6327
数据手册
Siemens Semiconductor
Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
BCV27E-6327 其它数据手册
Siemens Semiconductor
Transistor NPN Darlington BCV27/BCV27/E6327 SIEMENS Ampere=0.5V=30 SOt23
BCV27E6327HTSA1
数据手册
Infineon
SOT-23 NPN 30V 0.5A
BCV27E6327HTSA1
数据手册
Nexperia
BCV27E6327XT
数据手册
Infineon
SOT-23 NPN 30V 0.5A
Datasheet 搜索
搜索
百芯智造数据库涵盖1亿多个数据手册,每天更新超过5,000个PDF文件。
在线联系我们
黄经理 - 百芯智造销售经理在线,5 分钟前
您的邮箱 *
消息 *
发送