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BAT54XV2T1G 应用笔记 - ON Semiconductor

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BAT54XV2T1G 应用笔记

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© Semiconductor Components Industries, LLC, 2009
September, 2009 Rev. 5
1 Publication Order Number:
BAT54XV2T1/D
BAT54XV2T1
Schottky Barrier Diodes
These Schottky barrier diodes are designed for highspeed
switching applications, circuit protection, and voltage clamping.
Extremely low forward voltage reduces conduction loss. Miniature
surface mount package is excellent for handheld and portable
applications where space is limited.
Features
Extremely Fast Switching Speed
Low Forward Voltage 0.35 V (Typ) @ I
F
= 10 mA
PbFree Package is Available
MAXIMUM RATINGS (T
J
= 125°C unless otherwise noted)
Rating
Symbol Value Unit
Reverse Voltage V
R
30 V
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR5 Board,
(Note 1) T
A
= 25°C
Derate above 25°C
P
D
200
1.57
mW
mW/°C
Thermal Resistance,
JunctiontoAmbient
R
JA
635 °C/W
Junction and Storage Temperature T
J
, T
stg
55 to 125 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR4 Minimum Pad.
30 VOLT
SILICON HOTCARRIER
DETECTOR AND SWITCHING
DIODES
Preferred devices are recommended choices for future use
and best overall value.
1
CATHODE
2
ANODE
http://onsemi.com
SOD523
CASE 502
PLASTIC
1
2
1
Device Package Shipping
ORDERING INFORMATION
BAT54XV2T1 SOD523 3000 / Tape & Reel
MARKING DIAGRAM
BAT54XV2T1G SOD523
(PbFree)
3000 / Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
JV = Device Code
M = Date Code*
G = PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
JVM G
G
BAT54XV2T5G SOD523
(PbFree)
8000 / Tape & Reel
页面指南

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