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© Semiconductor Components Industries, LLC, 1997
October, 2016 − Rev. 10
1 Publication Order Number:
BAS70LT1/D
BAS70LT1G,
NSVBAS70LT1G
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
• Extremely Fast Switching Speed
• Low Forward Voltage
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T
J
= 150°C unless otherwise noted)
Rating
Symbol Value Unit
Forward Current I
F
70 mA
Non−Repetitive Peak Forward Surge
Current (t ≤ 1.0 s)
I
FSM
100 mA
Reverse Voltage V
R
70 V
Forward Power Dissipation
@ T
A
= 25°C
Derate above 25°C
P
F
225
1.8
mW
mW/°C
Operating Junction and Storage
Temperature Range
T
J,
T
stg
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
SOT−23 (TO−236)
CASE 318
STYLE 8
BE Specific Device Code
M = Date Code*
G = Pb−Free Package
MARKING DIAGRAM
Device Package Shipping
†
ORDERING INFORMATION
BAS70LT1G SOT−23
(Pb−Free)
3,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
3
CATHODE
1
ANODE
70 VOLTS SCHOTTKY
BARRIER DIODES
1
BE M G
G
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary
depending upon manufacturing location.
NSVBAS70LT1G SOT−23
(Pb−Free)
3,000 /
Tape & Reel
www.onsemi.com
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