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MRF6V4300NR1 MRF6V4300NBR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed primarily for CW large--signal output and driver applications with
frequencies up to 600 MHz. Devices are unmatched and are suitable for use in
industrial, medical and scientific applications.
! Typical CW Performance: V
DD
=50Volts,I
DQ
= 900 mA, P
out
= 300 Watts,
f = 450 MHz
Power Gain — 22 dB
Drain Efficiency — 60%
! Capable of Handling 10:1 VSWR, @ 50 Vdc, 450 MHz, 300 Watts CW
Output Power
Features
! Characterized with Series Equivalent Large--Signal Impedance Parameters
! Qualified Up to a Maximum of 50 V
DD
Operation
! Integrated ESD Protection
! Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
! 225"C Capable Plastic Package
! RoHS Compliant
! In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage V
DSS
--0.5, +110 Vdc
Gate--Source Voltage V
GS
--6.0, +10 Vdc
Storage Temperature Range T
stg
-- 65 to +150 "C
Case Operating Temperature T
C
150 "C
Operating Junction Temperature
(1,2)
T
J
225 "C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf
. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
Document Number: MRF6V4300N
Rev. 3, 4/2010
Freescale Semiconductor
Technical Data
MRF6V4300NR1
MRF6V4300NBR1
CASE 1484--04, STYLE 1
T O -- 2 7 2 W B -- 4
PLASTIC
MRF6V4300NBR1
CASE 1486--03, STYLE 1
T O -- 2 7 0 W B -- 4
PLASTIC
MRF6V4300NR1
10--600 MHz, 300 W , 50 V
LATERAL N--CHANNEL
SINGLE--ENDED
BROADBAND
RF POWER MOSFETs
PARTS ARE SINGLE--ENDED
(Top View)
RF
out
/V
DS
Figure 1. Pin Connections
RF
out
/V
DS
RF
in
/V
GS
RF
in
/V
GS
Note: Exposed backside of the package is
the source terminal for the transistor.
# Freescale Semiconductor, Inc., 2008--2010.
A
ll rights reserved.
