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AUIRS2301S 应用笔记 - Infineon

更新时间: 2025-04-22 22:11:19 (UTC+8)

AUIRS2301S 应用笔记

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1
AN-978 RevD
Application Note AN-978
HV Floating MOS-Gate Driver ICs
(HEXFET is a trademark of International Rectifier)
Table of Contents
Page
Gate drive requirement of high-side devices............................................................... 2
A typical block diagram ............................................................................................... 3
How to select the bootstrap components.................................................................... 5
How to calculate the power dissipation in an MGD..................................................... 6
How to deal with negative transients on the V
s
pin ..................................................... 9
Layout and other general guidelines ........................................................................... 11
How to boost gate drive current to drive modules....................................................... 14
How to provide a continuous gate drive ...................................................................... 17
How to generate a negative gate bias......................................................................... 19
How to drive a buck converter..................................................................................... 22
Dual forward converter and switched reluctance motor drives ................................... 24
Full bridge with current mode control .......................................................................... 24
Brushless and induction motor drives ......................................................................... 26
Push-pull ..................................................................................................................... 27
High-side P-channel .................................................................................................... 27
Troubleshooting guidelines ......................................................................................... 28
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