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3LN01C-TB-E 应用笔记 - ON Semiconductor

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3LN01C-TB-E 应用笔记

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61213 TKIM TC-00002936/62712 TKIM/33006PE MSIM TB-00002198/21400 TS(KOTO) TA-1987 No.6260-1/6
http://onsemi.com
Semiconductor Components Industries, LLC, 2013
June, 2013
3LN01C
N-Channel Small Signal MOSFET
30V, 0.15A, 3.7
Ω
, Single CP
Features
Low ON-resistance
Ultrahigh-speed switching
2.5V drive
Speci cations
Absolute Maximum Ratings
at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain to Source Voltage V
DSS
30 V
Gate to Source Voltage V
GSS
±10 V
Drain Current (DC) I
D
0.15 A
Drain Current (Pulse) I
DP
PW
10
μ
s, duty cycle
1% 0.6 A
Allowable Power Dissipation P
D
0.25 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
This product is designed to “ESD immunity < 200V
*
”, so please take care when handling.
*
Machine Model
Package Dimensions
unit : mm (typ)
7013A-013
Ordering number : EN6260C
Ordering & Package Information
Device Package Shipping memo
3LN01C-TB-E
CP
SC-59, TO-236,
SOT-23, TO-236AB
3,000
pcs./reel
Pb-Free
3LN01C-TB-H
CP
SC-59, TO-236,
SOT-23, TO-236AB
3,000
pcs./reel
Pb-Free
and
Halogen Free
Packing Type: TB Marking
Electrical Connection
1 : Gate
2 : Source
3 : Drain
CP
12
3
1.5
2.5
1.1
0.3
0.05
2.9
0.95
0.4
0.1
0.5
0.5
3LN01C-TB-E
3LN01C-TB-H
TB
YA
LOT No.
LOT No.
1
2
3
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
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