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Silicon Junction FETs (Small Signal)
unit: mm
2SJ364
Silicon P-Channel Junction FET
For analog switch
■ Features
●Low ON-resistance
●Low-noise characteristics
1: Source
2: Drain EIAJ: SC-70
3: Gate S-Mini Type Package (3-pin)
■ Absolute Maximum Ratings (Ta = 25°C)
Parameter
Gate to Drain voltage
Drain current
Gate current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
V
GDS
I
D
I
G
P
D
T
ch
T
stg
Ratings
65
−20
−10
150
150
−55 to +150
Unit
V
mA
mA
mW
°C
°C
■ Electrical Characteristics (Ta = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Gate to Drain voltage
Gate to Source cut-off voltage
Forward transfer admittance
Drain to Source ON-resistance
Input capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Symbol
I
DSS
*
I
GSS
V
GDS
V
GSC
| Y
fs
|
R
DS(on)
C
iss
C
rss
Conditions
V
DS
= −10V, V
GS
= 0
V
GS
= 30V, V
DS
= 0
I
G
= 10µA, V
DS
= 0
V
DS
= −10V, I
D
= −10µA
V
DS
= −10V, I
D
= −1mA, f = 1kHz
V
DS
= −10mV, V
GS
= 0
V
DS
= −10V, V
GS
= 0, f = 1MHz
min
− 0.2
65
1.8
max
−6
10
3.5
Unit
mA
nA
V
V
mS
Ω
pF
pF
*
I
DSS
rank classification
Marking Symbol (Example): 4M
typ
1.5
2.5
300
12
4
Runk
I
DSS
(mA)
Marking Symbol
O
− 0.2 to −1
4MO
P
− 0.6 to −1.5
4MP
Q
−1 to −3
4MQ
R
−2.5 to −6
4MR
2.1±0.1
1.3±0.10.9±0.1
0.7±0.1
0.3
+0.1
–0
0.15
+0.1
–0.05
2.0±0.2
1.25±0.1 0.4250.425
1
3
2
0.650.2 0.65
0 to 0.1
0.2±0.1
