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1 Publication Order Number :
2SB1216_2SD1816/D
www.onsemi.com
© Semiconductor Components Industries, LLC, 2016
March 2016 - Rev. 2
2SB1216, 2SD1816
Bipolar Transistor
(−)100V, (−)4A, Low VCE(sat),
(PNP)NPN Single
Features
• Low Collector to Emitter Saturation Voltage
• Small and Slim Package Facilitating Compactness of Sets
• High f
T
• Good Linearity of h
FE
• Fast Switching Time
Typical Applications
• Suitable for Relay Drivers
• High Speed Inverters
• Converters
• Other General High Current Switching Applications
SPECIFICATIONS ( ) : 2SB1216
ABSOLUTE MAXIMUM RATING at Ta = 25°C
(Note 1)
Parameter Symbol Value Unit
Collector to Base Voltage V
CBO
(−) 120 V
Collector to Emitter Voltage V
CEO
(−) 100 V
Emitter to Base Voltage V
EBO
(−) 6 V
Collector Current I
C
(−) 4 A
Collector Current (Pulse) I
CP
(−) 8 A
Collector Dissipation
P
C
1W
Tc=25°C
20 W
Junction Temperature
Tj 150 °C
Storage Temperature
Tstg −55 to +150 °C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
ELECTRICAL CONNECTION
MARKING
ORDERING INFORMATION
See detailed ordering and shipping
information on page 7 of this data sheet.
2,
4
3
1
2SD1816
2,
4
3
1
2S
B
1
2
1
6
1:Base
2 : Collector
3:Emitter
4 : Collector
B1216 D1816
LOT No.
RANK
LOT No.
RANK
IPAK / TP
1
2
3
4
DPAK / TP-FA
4
1
2
3
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