2SA1952 / 2SA1906 / 2SA2006
Transistors
High-speed Switching Transistor (
−
60V,
−
5A)
2SA1952 / 2SA1906 / 2SA2006
!
Features
1) High speed switching. (tf : Typ. 0.15
µ
s at I
C
= −
3A)
2) Low V
CE(sat)
. (Typ.
−
0.2V at I
C
/ I
B
= −
3 /
−
0.15A)
3) Wide SOA. (safe operating area)
4) Complements the 2SC5103 / 2SC5525.
!
Absolute maximum ratings
(Ta = 25
°
C)
Parameter Symbol
V
CBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
−100
−60
−5
−5
25
150
−55 ∼ +150
Unit
V
V
V
A
−10
1
10
1.5
A(Pulse)
W
2
W(Tc=25°C)
W
W
W(Tc=25°C)
W(Tc=25°C)25
2SA1952
2SA1906
2SA2006
°C
°C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Collector
power
dissipation
!
Packaging specifications and h
FE
Type 2SA1952
CPT3
Q
2500
2SA1906
PSD3
DEF
TL TL
1000
2SA2006
TO-220FN
EF
−
500
Package
h
FE
Code
Basic ordering unit (pieces)
!
External dimensions
(Units : mm)
2.3
0.5
1.0
0.5
9.5
2.5
0.8Min.
1.5
6.5
2.3
(
2
)
(
3
)
C0.5
0.65
0.9
(
1
)
0.75
2.3
0.9
1.5
5.5
(3) Emitter(Source)
(2) Collector(Drain)
(1) Base(Gate)
ROHM : CPT3
EIAJ : SC-63
ROHM : PSD3
ROHM : TO-220FN
2SA2006
2SA1906
2SA1952
EIAJ : SC-83A
5.1
1.24
0.78
0.5Min.
0.4
1.3
4.5
0to0.3
(
1
)
Base
(
2
)
Collector
(
3
)
Emitter
1.3
8.8
(
1
)(
3
)
2.54
(
2
)
5.08
3.2
13.1
10.1
(2) Collector
(
Drain
)
(3) Emitter
(
Source
)
(1) Base
(
Gate
)
0.75
0.8
2.54
(
1
)
(
3
)
(
2
)
(
1
)
2.54
(
3
)
(
2
)
5.0
8.0
14.0
15.0
12.0
1.3
1.2
10.0
3.2
φ
2.6
4.5
2.8
!
Electrical characteristics
(Ta = 25
°
C)
Min.
Typ.
Max. Unit
Conditions
BV
EBO
ICBO
IEBO
VCE(sat)
fT
Cob
−5
−
−
−
120
−
−
−
−
−
−
−
−
80
130
−
−
−10
−10
−0.3
270
−
−
V
V
µA
µA
V
−
MHz
pF
I
C
=
−50µA
BV
CEO −60 −
−
VIC
=
−1mA
I
E
=
−50µA
V
CB
=
−100V
V
EB
=
−5V
I
C/IB
=
−3A/−0.15A
−−
−0.5
VI
C/IB
=
−4A/−0.2A
V
BE(sat)
−−
−1.5
VIC/IB
=
−4A/−0.2A
−−
−1.2
VI
C/IB
=
−3A/−0.15A
h
FE 60 −
320
− VCE
=
−2V , IC
=
−1A
2SA1952
2SA1906
2SA2006 100 −
320
−
V
CE
=
−10V , IE
=
0.5A , f
=
30MHz
V
CB
=
−10V , IE
=
0A , f
=
1MHz
ton −−0.3 µsI
C
=
−3A , RL
=
10Ω
tstg −−1.5 µsI
B1
=
−IB2
=
−0.15A
tf −−0.3 µsV
CC
−30V
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output capacitance
Turn-on time
Storage time
Fall time
DC current
transfer ratio
Collector-base breakdown voltage
Parameter
BVCBO
Symbol
−100
