Datasheet
数据手册 > 双极性,晶体管,BJT,双极型 > ON Semiconductor > 2N6039G 数据手册PDF > 2N6039G 应用笔记 第 1/6 页
2N6039G
¥ 4.41
百芯的价格

2N6039G 应用笔记 - ON Semiconductor

更新时间: 2025-05-22 05:27:52 (UTC+8)

2N6039G 应用笔记

页码:/6页
下载 PDF
重新加载
下载
© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 15
1 Publication Order Number:
2N6035/D
2N6034G, 2N6035G,
2N6036G (PNP),
2N6038G,2N6039G (NPN)
Plastic Darlington
Complementary Silicon
Power Transistors
Plastic Darlington complementary silicon power transistors are
designed for general purpose amplifier and low−speed switching
applications.
Features
ESD Ratings: Machine Model, C; > 400 V
Human Body Model, 3B; > 8000 V
Epoxy Meets UL 94 V−0 @ 0.125 in
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage
2N6034G
2N6035G, 2N6038G
2N6036G, 2N6039G
V
CEO
40
60
80
Vdc
Collector−Base Voltage
2N6034G
2N6035G, 2N6038G
2N6036G, 2N6039G
V
CBO
40
60
80
Vdc
Emitter−Base Voltage V
EBO
5.0 Vdc
Collector Current − Continuous I
C
4.0 Adc
Collector Current − Peak I
CM
8.0 Apk
Base Current I
B
100 mAdc
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
P
D
40
320
W
mW/°C
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
P
D
1.5
12
W
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
65 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
3.12 °C/W
Thermal Resistance, Junction−to−Ambient
R
q
JA
83.3 °C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
4.0 AMPERES DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
40, 60, 80 VOLTS, 40 WATTS
Y = Year
WW = Work Week
2N603x = Device Code
x = 4, 5, 6, 8, 9
G = Pb−Free Package
MARKING DIAGRAM
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
TO−225
CASE 77−09
STYLE 1
1
2
3
YWW
2
N603xG
COLLECTOR 2, 4
BASE
3
EMITTER 1
COLLECTOR 2, 4
BASE
3
EMITTER 1
NPN PNP
2N6038 2N6034
2N6039 2N6035
2N6036
页面指南

2N6039G 数据手册 PDF

2N6039G 数据手册
ON Semiconductor
4 页, 107 KB
2N6039G 其它数据手册
ON Semiconductor
8 页, 240 KB
2N6039G 产品设计图
ON Semiconductor
2 页, 32 KB
2N6039G 应用笔记
ON Semiconductor
6 页, 145 KB
2N6039G 其他参考文件
ON Semiconductor
1 页, 136 KB

2N6039 数据手册 PDF

2N6039
数据手册
ST Microelectronics
Trans Darlington NPN 80V 4A 40000mW 3Pin(3+Tab) SOT-32 Tube
2N6039
数据手册
ON Semiconductor
TO-225-3 NPN 80V 4A
2N6039
数据手册
Central Semiconductor
Trans Darlington NPN 80V 4A 3Pin TO-126 Box
2N6039
数据手册
Motorola
4A, 80V, NPN, Si, POWER TRANSISTOR, TO-225AA
2N6039
数据手册
NTE Electronics
t-Npn Si-Darlington Amp
2N6039
数据手册
Advanced Semiconductor
Power Bipolar Transistor, 4A I(C), 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN
2N6039
数据手册
TI
NPN, Si, POWER TRANSISTOR, TO-126, TO-126, 3 PIN
2N6039
数据手册
Semelab
4A, 80V, NPN, Si, POWER TRANSISTOR, TO-126, TO-126, 3 PIN
2N6039
数据手册
National Semiconductor
TRANSISTOR NPN, Si, POWER TRANSISTOR, TO-126, TO-126, 3 PIN, BIP General Purpose Power
2N6039
数据手册
Continental Device
W Medium Power NPN Plastic Leaded Transistor. 40V Vceo, A Ic, hFE.
Datasheet 搜索
搜索
百芯智造数据库涵盖1亿多个数据手册,每天更新超过5,000个PDF文件。
相关文档: 2N6039 数据手册
在线联系我们
黄经理 - 百芯智造销售经理在线,5 分钟前
您的邮箱 *
消息 *
发送