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2DB1188R-13
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2DB1188R-13 应用笔记 - Diodes

更新时间: 2025-04-17 01:10:20 (UTC+8)

2DB1188R-13 应用笔记

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DMN32D2LFB4
Document number: DS31124 Rev. 9 - 2
1 of 6
www.diodes.com
August 2015
© Diodes Incorporated
DMN32D2LFB4
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(on)
max
I
D
max
T
A
= +25C
30V
1.2 @ V
GS
= 4V
415mA
1.5 @ V
GS
= 2.5V
370mA
2.2 @ V
GS
= 1.8V
300mA
Description
This MOSFET is designed to minimize the on-state resistance and yet
maintain superior switching performance, making it ideal for high-
efficiency power management applications.
Applications
Backlighting
Power Management Functions
DC-DC Converters
Ordering Information (Note 4)
Part Number
Marking
Reel size (inches)
Tape width (mm)
Quantity per reel
DMN32D2LFB4-7
DV
7
8
3,000
DMN32D2LFB4-7B
DV
7
8
10,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
X2-DFN1006-3
Bottom View
Equivalent Circuit
Top View
Pin-Out
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
D
S
G
ESD PROTECTED
e4
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