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1SS387
2001-06-13
1
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS387
Ultra High Speed Switching Application
Small package
Low forward voltage : V
F (3)
= 0.98V (typ.)
Fast reverse recovery time : t
rr
= 1.6ns (typ.)
Small total capacitance : C
T
= 0.5pF (typ.)
Maximum Ratings
(Ta = 25°C)
Characteristic Symbol Rating Unit
Maximum (peak) reverse Voltage V
RM
85 V
Reverse voltage V
R
80 V
Maximum (peak) forward current I
FM
200 mA
Average forward current I
O
100 mA
Surge current (10ms) I
FSM
1 A
Power dissipation P 150 * mW
Junction temperature T
j
125 °C
Storage temperature T
stg
−55∼125 °C
* : Mounted on a glass epoxy circuit board of 20 × 20mm,
pad dimension of 4 × 4mm.
Electrical Characteristics
(Ta = 25°C)
Characteristic Symbol
Test
Circuit
Test Condition Min Typ. Max Unit
V
F
(1)
― I
F
= 1mA ― 0.62 ―
V
F
(2)
― I
F
= 10mA ― 0.75 ―
Forward voltage
V
F
(3)
― I
F
= 100mA ― 0.97 1.20
V
I
R
(1)
― V
R
= 30V ― ― 0.1
Reverse current
I
R
(2)
― V
R
= 80V ― ― 0.5
µA
Total capacitance C
T
― V
R
= 0, f = 1MH
z
― 0.5 3.0 pF
Reverse recovery time t
rr
― I
F
= 10mA, Fig.1 ― 1.6 4.0 ns
JEDEC ―
EIAJ ―
TOSHIBA
1-1G1A
Weight: 1.4mg
Unit: mm
