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1SS315
2007-11-01
1
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS315
UHF Band Mixer Applications
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics Symbol Rating Unit
Maximum (peak) reverse voltage V
RM
5 V
Forward current I
F
30 mA
Junction temperature T
j
125 °C
Storage temperature range T
stg
−55~125 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Forward voltage V
F
I
F
= 2 mA ⎯ 0.25 ⎯ V
Forward current I
F
V
F
= 0.5 V 30 ⎯ ⎯ mA
Reverse current I
R
V
R
= 0.5 V ⎯ ⎯ 25 μA
Total capacitance C
T
V
R
= 0.2 V, f = 1 MHz ⎯ 0.6 ⎯ pF
Marking
Unit: mm
JEDEC ―
JEITA ―
TOSHIBA 1-1E1A
Weight: 0.004 g (typ.)
